A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates
- 期刊名称IEEE Transactions on Electron Devices
- 作者Fu, Houqiang; Chen, Hong; Huang, Xuanqi; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Zhao, Yuji
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小2542.09KB
- 发表时间2018
- DOI10.1109/TED.2018.2841904
- 页码1-7
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