![[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling]()
[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunnelingSeung-Yong Cha, ; Hyo-June Kim, ; Doo-Jin Choi, · 2010