![Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C]()
Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °CLiu, Jiangwei; Ohsato, Hirotaka; Da, Bo; Teraji, Tokuyuki; Kobayashi, Atsushi; Fujioka, Hiroshi; Koide, Yasuo · Journal of Physics D: Applied Physics · 2019