![A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates]()
A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal SubstratesFu, Houqiang; Chen, Hong; Huang, Xuanqi; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Zhao, Yuji · IEEE Transactions on Electron Devices · 2018