三年制初中 代数 第2册 上 教案
- 作者人民教育出版社中学数学室编著
- 出版社北京：人民教育出版社；延边教育出版社联合
- 标注页数177 页
- 文件页数185 页
- 文件大小33.96 MB
- 出版时间2001
- ISBN7543743469
A model of the off-behaviour of 4H–SiC power JFETsBellone, Salvatore; Di Benedetto, Luigi; Licciardo, Gian Domenico · Solid-State Electronics · 2015
On the Crossing-Point of 4H-SiC Power Diodes CharacteristicsDi Benedetto, Luigi; Licciardo, Gian Domenico; Nipoti, Roberta; Bellone, Salvatore · IEEE Electron Device Letters · 2014
Analytical Model and Design of 4H-SiC Planar and Trenched JBS DiodesDi Benedetto, Luigi; Licciardo, Gian Domenico; Erlbacher, Tobias; Bauer, Anton J.; Bellone, Salvatore · IEEE Transactions on Electron Devices · 2016
Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic ApplicationsDi Benedetto, Luigi; Landi, Giovanni; Licciardo, Gian Domenico; Neitzert, Heinz-Christoph; Bellone, Salvatore · IEEE Journal of the Electron Devices Society · 2015
Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature RangeLicciardo, Gian Domenico; Bellone, Salvatore; Di Benedetto, Luigi · IEEE Transactions on Power Electronics · 2015
Analytical Description of the Input Capacitance of 4H-SiC DMOSFET’s in Presence of Oxide-Semiconductor Interface TrapsLicciardo, Gian Domenico; Di Benedetto, Luigi; Bellone, Salvatore · Materials Science Forum · 2016
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITsBellone, Salvatore; Di Benedetto, Luigi; Licciardo, Gian Domenico · IEEE Transactions on Electron Devices · 2012