[Current Topics in Cellular Regulation] Volume 5 || A Theoretical Background to the Use of Measured Concentrations of Intermediates in Study of the Control of Intermediary Metabolism
- 作者ROLLESTON, F.S.
- 文件大小1891.46KB
- 发表时间1972
- DOI10.1016/b978-0-12-152805-8.50008-3
- 页码47-75
Electrical properties of hydrogen bombarded silicon surfacesA. Barhdadi; J.P. Ponpon; A. Grob; J.J. Grob; A. Mesli; J.C. Müller; P. Siffert · 1986
Recoil implantation of antimony into siliconA. Grob; J.J. Grob; N. Mesli; D. Salles; P. Siffert · 1981
Dynamics of lattice damage accumulation for MeV ions in siliconA. Golanski; A. Grob; J.J. Grob; O.W. Holland; S.J. Pennycook; C.W. White · 1992
Rapid thermal annealing and titanium silicide formationD. Levy; J. P. Ponpon; A. Grob; J. J. Grob; R. Stuck · 1985
Formation of palladium silicide by rapid thermal annealingD. Levy; A. Grob; J. J. Grob; J. P. Ponpon · 1984
Damage created in silicon by BFn+ (1≤ n ≤ 3) and PFn+ (1⪯ n:≤ 5) implantationsA. Grob; J.J. Grob; A. Golanski · 1987
Overcoming background contamination in closed loop stripping analysis (CLSA)K. Grob; G. Grob; A. Habich · 1984
A dechanneling investigation of MeV oxygen implanted siliconA. Grob; J.J. Grob; P. Thévenin; P. Siffert · 1991