Introduction Foreword
- 期刊名称Social Compass
- 作者Nesti, A.
- 卷第34卷
- 印刷ISSN0037-7686
- 文件大小91.36KB
- 发表时间1987-01-01
- DOI10.1177/003776868703400201
- 页码135-136
InP/InGaAs Hot Electron Transistors with Insulated GateSuwa, Akira; Hasegawa, Takashi; Hino, Takahiro; Saito, Hisashi; Oono, Masaya; Miyamoto, Yasuyuki; Furuya, Kazuhito · Japanese Journal of Applied Physics · 2007
Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current DensitySaito, Hisashi; Matsumoto, Yutaka; Miyamoto, Yasuyuki; Furuya, Kazuhito · Japanese Journal of Applied Physics · 2011
Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n <sup>+</sup> -SourceKanazawa, Toru; Wakabayashi, Kazuya; Saito, Hisashi; Terao, Ryousuke; Ikeda, Shunsuke; Miyamoto, Yasuyuki; Furuya, Kazuhito · Applied Physics Express · 2010
[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown sourceKanazawa, Toru; Saito, Hisashi; Wakabayashi, Kazuya; Tajima, Tomonori; Miyamoto, Yasuyuki; Furuya, Kazuhito · 2009
[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Hot electron transistors controlled by insulated gate with 70 NM-wide emitterSaito, Hisashi; Hino, Takahiro; Miyamoto, Yasuyuki; Furuya, Kazuhito · 2008
[IEEE 2008 International Nano-Optoelectronics Workshop (i-Now) - Tokyo, Japan (2008.08.2-2008.08.15)] 2008 International Nano-Optoelectronics Workshop - Increment of voltage gain of InP/InGaAs hot electron transistors controlled by insulated gateHisashi Saito, ; Yasuyuki Miyamoto, ; Kazuhito Furuya, · 2008
[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Fabrication of hot electron transistors controlled by insulated gateHino, Takahiro; Suwa, Akira; Hasegawa, Takashi; Saito, Hisashi; Oono, Masaya; Miyamoto, Yasuyuki; Furuya, Kazuhito · 2007
Magnetic Domain Wall OscillatorOno, Teruo; Nakatani, Yoshinobu · Applied Physics Express · 2008
Electromagnetically Spinning Sphere ViscometerSakai, Keiji; Hirano, Taichi; Hosoda, Maiko · Applied Physics Express · 2010
Graphene–metal hybrid plasmonic switchChen, Fang; Yao, Duanzheng; Liu, Yanan · Applied Physics Express · 2014
Magnetic Loss in Microwave HeatingPeng, Zhiwei; Hwang, Jiann-Yang; Andriese, Matthew · Applied Physics Express · 2012
Detached electrooptic imaging (DEI)Tsuchiya, Masahiro; Shiozawa, Takahiro · Applied Physics Express · 2015
Joule heating in spin Hall geometryTaniguchi, Tomohiro · Applied Physics Express · 2016
Combinatorial Plasma Etching ProcessMoon, Chang Sung; Takeda, Keigo; Sekine, Makoto; Setsuhara, Yuichi; Shiratani, Masaharu; Hori, Masaru · Applied Physics Express · 2009
An electromechanical displacement transducerVilliers, Marius; Mahboob, Imran; Nishiguchi, Katsuhiko; Hatanaka, Daiki; Fujiwara, Akira; Yamaguchi, Hiroshi · Applied Physics Express · 2016