SPIE Proceedings [SPIE Semiconductor Conferences - Bay Point, FL (Monday 23 March 1987)] Growth of Compound Semiconductors - Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality
- 作者Park, R. M.; Kleiman, J.; Mar, H. A.; Gunshor, Robert L.; Morkoc, Hadis
- 卷第796卷
- 印刷ISSN0277-786X
- 文件大小365.73KB
- 发表时间1987
- DOI10.1117/12.941001
- 页码86-90
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