Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon
- 作者W. Lur; J.Y. Cheng; C.H. Chu; M.H. Wang; T.C. Lee; Y.J. Wann; W.Y. Chao; L.J. Chen
- 卷第39卷
- 印刷ISSN0168-583X
- 文件大小704.84KB
- 发表时间1989
- DOI10.1016/0168-583x(89)90791-x
- 页码297-301
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