Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structure
- 期刊名称IEEE Transactions on Appiled Superconductivity
- 作者Nagasawa, S.; Tahara, S.; Numata, H.; Tsuchida, S.
- 卷第4卷
- 期第1期
- 印刷ISSN1051-8223
- 文件大小645.29KB
- 发表时间1994-3
- DOI10.1109/77.273060
- 页码19-24
[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Biographies2014
[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - PrefaceChaparala, Prasad · 2014
[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Copyright page2014
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Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devicesRaghavan, Nagarajan; Bosman, Michel; Frey, Daniel D.; Pey, Kin Leong · Microelectronics Reliability · 2014
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approachRaghavan, Nagarajan; Frey, Daniel D.; Bosman, Michel; Pey, Kin Leong · Microelectronics Reliability · 2015
[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Stochastic failure model for endurance degradation in vacancy modulated HfO<inf>x</inf> RRAM using the percolation cell frameworkRaghavan, Nagarajan; Pey, Kin Leong; Frey, Daniel D.; Bosman, Michel · 2014