[IEEE 2018 IEEE International Interconnect Technology Conference (IITC) - Santa Clara, CA, USA (2018.6.4-2018.6.7)] 2018 IEEE International Interconnect Technology Conference (IITC) - IITC 2018 Keynote Title CMOS/Cu BEOL Technology in Manufacturing: 20 Years and C2018

[IEEE 2010 IEEE International Interconnect Technology Conference - IITC - Burlingame, CA, USA (2010.06.6-2010.06.9)] 2010 IEEE International Interconnect Technology Conference - Development of low temperature dielectrics down to 150°C for multiple TSVs structure with Wafer-on-Wafer (WOW) technologyKitada, H.; Maeda, N.; Fujimoto, K.; Mizushima, Y.; Nakata, Y.; Nakamura, T.; Lee, W.; Kwon, Y-S.; Ohba, T. · 2010

[IEEE IEEE International Interconnect Technology Conference - Burlingame, CA, USA (2-4 June 2003)] Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) - The application of ALD WN/sub x/C/sub y/ as a copper diffusion barrierSmith, S.; Book, G.; Li, W.M.; Sun, Y.M.; Gillespie, P.; Tuominen, M.; Pfeifer, K. · 2003

[IEEE IEEE 2002 International Interconnect Technology Conference - Burlingame, CA, USA (3-5 June 2002)] Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519) - Deposition of WN/sub x/C/sub y/ thin films by ALCVD/spl trade/ method for diffusion barriers in metallizationWei-Min Li, ; Kai Elers, ; Juhana Kostamo, ; Kaipio, S.; Huotari, H.; Soininen, M.; Soininen, P.J.; Tuominen, M.; Haukka, S.; Smith, S.; Besling, W. · 2002

[IEEE 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) - Grenoble, France (2015.5.18-2015.5.21)] 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) - Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substratesGeenen, F. A.; Van Stiphout, K.; Jordan-Sweef, J.; Vantomme, A.; Lavoie, C.; Detavernier, C. · 2015

[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stackingLim, D. F.; Wei, J.; Leong, K. C.; Tan, C. S. · 2011

[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Thermal stability and interface improvement of thin NiSiGe by C⁺ ion implantationZhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Hollander, B.; Hartmann, J.-M.; Zhang, M.; Wang, X.; Mantl, S. · 2011

[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - A modified model of high-T/sub c/ superconducting interconnect propagation characteristics for VLSI packagingJinfeng Kang, ; Ruqi Han, ; Yangyuan Wang, · 1995

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - A 65nm-node, Cu interconnect technology using porous SiOCH film (k=2.5) covered with ultra-thin, low-k pore seal (k=2.7)Tada, M.; Harada, Y.; Tamura, T.; Inoue, N.; Ito, F.; Yoshiki, M.; Ohtake, H.; Narihiro, M.; Tagami, M.; Ueki, M.; Hijioka, K.; Abe, M.; Takeuchi, T.; Saito, S.; Onodera, T.; Furutake, N.; Arai, K.; Fujii, K.; Hayashi, Y. · 2003

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic filmOhtake, H.; Saito, S.; Tada, M.; Harada, Y.; Onodera, T.; Hayashi, Y. · 2002

[IEEE Proceedings of the IEEE 2001 International Interconnect Technology Conference - Burlingame, CA, USA (2001.06.6-2001.06.6)] Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461) - Dual hard mask process for low-k porous organosilica dielectric in copper dual damascene interconnect fabricationHiroi, M.; Tada, M.; Ohtake, H.; Saito, S.; Onodera, T.; Furutake, N.; Harada, Y.; Hayashi, Y. · 2001

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Highly reliable, 65 nm-node Cu dual damascene interconnects with full porous-SiOCH (k=2.5) films for low-power ASICsUeki, M.; Narihiro, M.; Ohtake, H.; Tagami, M.; Tada, M.; Ito, F.; Harada, Y.; Abe, M.; Inoue, N.; Arai, K.; Takeuchi, T.; Saito, S.; Onodera, T.; Furutake, N.; Hiroi, M.; Sekine, M.; Hayashi, Y. · 2004

[IEEE IEEE 2002 International Interconnect Technology Conference - Burlingame, CA, USA (3-5 June 2002)] Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519) - Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIsTada, M.; Harada, Y.; Hijioka, K.; Ohtake, H.; Takeuchi, T.; Saito, S.; Onodera, T.; Hiroi, M.; Furutake, N.; Hayashi, Y. · 2002

[Japan Soc. Appl. Phys 2001 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (12-14 June 2001)] 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) - Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic filmTada, M.; Ohtake, H.; Harada, Y.; Hiroi, M.; Saito, S.; Onodera, T.; Furutake, N.; Kawahara, J.; Tagami, M.; Kinoshita, K.; Fukai, T.; Mogami, T.; Hayashi, Y. · 2001