Book reviews
- 期刊名称The Australian Library Journal
- 作者Coxon, Howard; Durey, Peter; Hazell, Anne; Henty, Margaret; Horn, Barbara; Richardson, Alan; Smith, Merete; Steele, Colin; Anderson, June; Calvert, Philip; Kent, Philip G
- 卷第46卷
- 期第2期
- 印刷ISSN0004-9670
- 电子ISSN2201-4276
- 文件大小597.64KB
- 发表时间1997-01
- DOI10.1080/00049670.1997.10755802
- 页码204-214
Negative differential resistance in three terminal photodetectorsMikhelashvili, V.; Meyler, B.; Yofis, S.; Padmanabhan, R.; Eisenstein, G. · Applied Physics Letters · 2016
Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifierKhanonkin, I.; Mishra, A. K.; Karni, O.; Banyoudeh, S.; Schnabel, F.; Sichkovskyi, V.; Mikhelashvili, V.; Reithmaier, J. P.; Eisenstein, G. · Physical Review B · 2018
Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structuresMikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Eisenstein, G. · Journal of Applied Physics · 2016
The influence of image forces on the extraction of physical parameters in Schottky barrier diodesMikhelashvili, V.; Eisenstein, G. · 1999
Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiersKarni, O.; Kuchar, K. J.; Capua, A.; Mikhelashvili, V.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.; Eisenstein, G. · Applied Physics Letters · 2014
On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasersMikhelashvili, V.; Eyal, O.; Khanonkin, I.; Banyoudeh, S.; Sichkovskyi, V.; Reithmaier, J. P.; Eisenstein, G. · Journal of Applied Physics · 2018
Electrical characteristics of Ta[sub 2]O[sub 5] thin films deposited by electron beam gun evaporationMikhelashvili, V.; Eisenstein, G. · Applied Physics Letters · 1999
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperaturesEyal, O.; Willinger, A.; Banyoudeh, S.; Schanbel, F.; Sichkovskyi, V.; Mikhelashvili, V.; Reithmaier, J. P.; Eisenstein, G. · Optics Express · 2017
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986