band in
- 期刊名称Physical Review C
- 作者Fotiades, N.; Cizewski, J. A.; Lister, C. J.; Davids, C. N.; Janssens, R. V. F.; Seweryniak, D.; Carpenter, M. P.; Khoo, T. L.; Lauritsen, T.; Nisius, D.; Reiter, P.; Uusitalo, J.; Wiedenhover, I.; Macchiavelli, A. O.; MacLeod, R. W.
- 卷第60卷
- 期第5期
- 印刷ISSN0556-2813
- 电子ISSN1089-490X
- 文件大小51.76KB
- 发表时间1999-10-7
- DOI10.1103/physrevc.60.057302
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986