Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells
- 期刊名称Physical Review B
- 作者Madhavi, S.; Venkataraman, V.; Sturm, J. C.; Xie, Y. H.
- 卷第61卷
- 期第24期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小167.32KB
- 发表时间2000-6-15
- DOI10.1103/PhysRevB.61.16807
- 页码16807-16818
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