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Technology CAD of silicided Schottky barrier MOSFET for elevated source–drain engineeringA.R. Saha; S. Chattopadhyay; C. Bose; C.K. Maiti · 2005
Effect of annealing on interface state density of Ni-silicided/Si1−xGex Schottky diodeA.R. Saha; S. Chattopadhyay; G.K. Dalapati; C. Bose; C.K. Maiti · 2005
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage techniqueA.R. Saha; S. Chattopadhyay; R. Das; C. Bose; C.K. Maiti · 2006