Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE
- 作者P. Panpech; S. Vijarnwannaluk; S. Sanorpim; W. Ono; F. Nakajima; R. Katayama; K. Onabe
- 卷第298卷
- 印刷ISSN0022-0248
- 文件大小385.00KB
- 发表时间2007
- DOI10.1016/j.jcrysgro.2006.10.009
- 页码107-110
同作者推荐
MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrationsF. Nakajima; S. Sanorpim; W. Ono; R. Katayama; K. Onabe · 2006
High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHyS. Sanorpim; F. Nakajima; W. Ono; R. Katayama; K. Onabe · 2006
Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPEP. Panpech; S. Vijarnwannaluk; S. Sanorpim; W. Ono; F. Nakajima; R. Katayama; K. Onabe · 2007