Commitment in the workplace
- 期刊名称Management Research News
- 作者Ogba, Ike‐Elechi
- 卷第31卷
- 期第11期
- 印刷ISSN0140-9174
- 文件大小92.46KB
- 发表时间2008-09-12
- DOI10.1108/01409170810913051
- 页码867-878
Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS DiodesBrosselard, P.; Camara, N.; Banu, V.; Jorda, X.; Vellvehi, M.; Godignon, P.; Millan, J. · 2008
[IEEE 2014 International Semiconductor Conference (CAS) - Sinaia, Romania (2014.10.13-2014.10.15)] 2014 International Semiconductor Conference (CAS) - Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETsBanu, V.; Godignon, P.; Alexandru, M.; Vellvehi, M.; Jorda, X.; Millan, J. · 2014
[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - Comparative evaluation of high current SiC schottky diodes and Si PN junction diodesJorda, X.; Tournier, D.; Vellvehi, M.; Perez, A.; Perez, R.; Godignon, P.; Millan, J. · 2005
[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - Electrical parameter variation of PT-IGBT by backside proton irradiationJorda, X.; Vobecky, J.; Godignon, P.; Perpina, X.; Vellvehi, M.; Hazdra, P.; Millan, J. · 2003
[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - Complementary high voltage MOSFETs using a modified standard CMOS processPerez, A.; Jorda, X.; Godignon, P.; Vellvehi, M.; Rebollo, J.; Millan, J. · 2003
[IEEE 2007 European Conference on Power Electronics and Applications - Aalborg, Denmark (2007.09.2-2007.09.5)] 2007 European Conference on Power Electronics and Applications - 1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodesBrosselard, P.; Jorda, X.; Vellvehi, M.; Perez-Tomas, A.; Godignon, P.; Millan, J. · 2007
[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodesBrosselard, P.; Tomas, A. Perez.; Camara, N.; Hassan, J.; Jorda, X.; Vellvehi, M.; Godignon, P.; Millan, J.; Bergman, J. P. · 2008
[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protectionsPerez, A.; Jorda, X.; Godignon, P.; Vellvehi, M.; Galvez, J.L.; Millan, J. · 2003