Vitamin K
- 期刊名称Advances in Nutrition: An International Review Journal
- 作者Suttie, J. W.; Booth, S. L.
- 卷第2卷
- 期第5期
- 电子ISSN2156-5376
- 文件大小546.10KB
- 发表时间2011-09-01
- DOI10.3945/an.111.000786
- 页码440-441
Investigation on the electrical properties of superlattice FETs using a non-parabolic band modelMaiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G. · Solid-State Electronics · 2014
[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Performance limits of superlattice-based steep-slope nanowire FETsGnani, E.; Maiorano, P.; Reggiani, S.; Gnudi, A.; Baccarani, G. · 2011
[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Investigation on superlattice heterostructures for steep-slope nanowire FETsGnani, E.; Maiorano, P.; Reggiani, S.; Gnudi, A.; Baccarani, G. · 2011
[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Non-parabolic band effects on the electrical properties of superlattice FETsMaiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G. · 2013
[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - An investigation on steep-slope and low-power nanowire FETsGnani, E.; Maiorano, P.; Reggiani, S.; Gnudi, A.; Baccarani, G. · 2011
[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Effects of D<inf>it</inf>-induced degradation on InGaAs/InAlAs Nanowire Superlattice-FET using Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf>/La<inf>2</inf>O<inf>3</inf> as gate stacksMaiorano, P.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G. · 2015