Polar heterojunction interfacesHarrison, W. A.; Kraut, E. A.; Waldrop, J. R.; Grant, R. W. · Physical Review B · 1978

Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band DiscontiuitiesWaldrop, J. R.; Grant, R. W. · Physical Review Letters · 1979

Metal contacts to GaAs with 1 eV Schottky barrier heightWaldrop, J. R.; Grant, R. W. · Applied Physics Letters · 1988

Interface chemistry of metal-GaAs Schottky-barrier contactsWaldrop, J. R.; Grant, R. W. · Applied Physics Letters · 1979

Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopyWaldrop, J. R.; Grant, R. W. · Applied Physics Letters · 1996

Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopyWaldrop, J. R.; Kraut, E. A.; Farley, C. W.; Grant, R. W. · 1991