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Behavior of high dose O+-implanted Si/Ge/Si structuresZhang, J. P.; Tang, Y. S.; Robinson, A. K.; Bussmann, U.; Hemment, P. L. F.; Sealy, B. J.; Newstead, S. M.; Powell, A. R.; Whall, T. E.; Parker, E. H. C. · Applied Physics Letters · 1990

Formation of buried SiO2 layer by oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 substratesTang, Y. S.; Zhang, Jingping; Hemment, P. L. F.; Sealy, B. J.; Liu, Hengda; Castle, J. E.; Newstead, S. M.; Powell, A. R.; Whall, T. E.; Parker, E. H. C. · Journal of Applied Physics · 1990

Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988

Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006

Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000

Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000

Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008

Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008

Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005

Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013