![An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)]()
An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)Aritome, Seiichi; Hatakeyama, Ikuo; Endoh, Tetsuo; Yamaguchi, Tetsuya; Shuto, Susumu; Iizuka, Hirohisa; Maruyama, Tooru; Watanabe, Hiroshi; Hemink, Gertjan; Sakui, Koji; Tanaka, Tomoharu; Momodomi, Masaki; Shirota, Riichiro · Japanese Journal of Applied Physics · 1994