[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT
- 作者Amer, Mostafa; Hassan, Ahmad; Ragab, Ahmed; Yacout, Soumaya; Savaria, Yvon; Sawan, Mohamad
- 文件大小1581.63KB
- 发表时间2018
- DOI10.1109/ISCAS.2018.8351420
- 页码1-5
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