Errata
- 期刊名称Transactions of the American Institute of Electrical Engineers. Part III: Power Apparatus and Systems
- 卷第74卷
- 期第3期
- 印刷ISSN0097-2460
- 文件大小243.25KB
- 发表时间1955-01
- DOI10.1109/aieepas.1955.4499150
- 页码790-790
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (1997.09.8-1997.09.10)] SISPAD 97 1997 International Conference on Simulation of Semiconductor Processes and Devices Technical Digest SISPAD-97 - SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (1997.09.8-1997.09.10)] SISPAD 97 1997 International Conference on Simulation of Semiconductor Processes and Devices Technical Digest SISPAD-97 - Index of authors1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Progress in predicting transient diffusionRafferty, C. · 1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Fast algorithms for computing electrostatic geometric sensitivitiesWang, J.; White, J. · 1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - VLSI performance metric based on minimum TCAD simulationsSchrom, G.; De, V.; Selberherr, S. · 1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Modeling nonparabolicity effects in silicon inversion layersTroger, C.; Kosina, H.; Selberherr, S. · 1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Mechanical stress modeling for silicon fabrication processesRueda, H.A.; Cea, S.; Law, M.E. · 1997
[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Methodology for predictive calibration of TCAD simulatorsLe Carval, G.; Scheiblin, P.; Poncet, D.; Rivallin, P. · 1997
Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAsFischetti, M V.; Sano, N.; Laux, S. E.; Natori, K. · Journal of Technology Computer Aided Design TCAD · 1996
[IEEE 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts - Osaka, Japan (19-21 Oct. 1998)] 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) - Physical mechanism of current fluctuation under ultra-small device structuresSano, N.; Natori, K.; Mukai, M.; Matsuzawa, K. · 1998
[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAsFischetti, M.V.; Sano, N.; Laux, S.E.; Natori, K. · 1996