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Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors

Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors

A. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury
  • 作者A. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury
  • 卷第30卷
  • 期第10期
  • 印刷ISSN0011-4626
  • 电子ISSN1572-9486
  • 文件大小265.58KB
  • 发表时间1980
  • DOI10.1007/bf01604477
  • 页码1161-1166
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