Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealingS. B. Felch; E. Collart; V. Parihar; S. Thirupapuliyur; R. Schreutelkamp; B. J. Pawlak; T. Hoffmann; S. Severi; P. Eyben; W. Vandervorst; T. Noda · 2008

Profiling of ultrashallow junctionsM. J. Goeckner; S. B. Felch; Z. Fang; A. Oberhofer; V. K. F. Chia; G. R. Mount; M. Poulakos; W. A. Keenan · 2000

Plasma doping for shallow junctionsM. J. Goeckner; S. B. Felch; Z. Fang; D. Lenoble; J. Galvier; A. Grouillet; G. C. Yeap; D. Bang; M. Lin · 1999

Suppression of phosphorus diffusion by carbon co-implantationPawlak, B. J.; Duffy, R.; Janssens, T.; Vandervorst, W.; Felch, S. B.; Collart, E. J. H.; Cowern, N. E. B. · Applied Physics Letters · 2006

Determination of the Cooper-pair mass in niobiumTate, J.; Felch, S. B.; Cabrera, B. · Physical Review B · 1990

Study of gate oxide damage in an electron cyclotron resonance argon plasmaFelch, S. B. · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures · 1992

Effect of amorphization and carbon co-doping on activation and diffusion of boron in siliconPawlak, B. J.; Janssens, T.; Brijs, B.; Vandervorst, W.; Collart, E. J. H.; Felch, S. B.; Cowern, N. E. B. · Applied Physics Letters · 2006