Leakage mechanism in GaN and AlGaN Schottky interfacesHashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki · Applied Physics Letters · 2004

Mechanism of current leakage through metal/n-GaN interfacesSusumu Oyama; Tamotsu Hashizume; Hideki Hasegawa · 2002

Deep Electron Traps in Undoped GaAs Grown by MOCVDHashizume, Tamotsu; Ikeda, Eiji; Akatsu, Yuji; Ohno, Hideo; Hasegawa, Hideki · Japanese Journal of Applied Physics · 1984

Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAsHashizume, Tamotsu; Hasegawa, Hideki; Ohno, Hideo · Journal of Applied Physics · 1990

Surface passivation of GaAs by ultra-thin cubic GaN layerSanguan Anantathanasarn; Shin-ya Ootomo; Tamotsu Hashizume; Hideki Hasegawa · 2000

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructureKazushi Matsuo; Noboru Negoro; Junji Kotani; Tamotsu Hashizume; Hideki Hasegawa · 2005

Properties of Metal-Semiconductor Interfaces Formed on n-Type GaNHasegawa, Hideki; Koyama, Yuji; Hashizume, Tamotsu · Japanese Journal of Applied Physics · 1999

Insulator-GaN interface structures formed by plasma-assisted chemical vapor depositionRyuusuke Nakasaki; Tamotsu Hashizume; Hideki Hasegawa · 2000

Ultra Thin Flexible Glass SubstratesPlichta, Armin; Weber, Andreas; Habeck, Andreas · MRS Proceedings · 2003

Principles of Ion MixingMatteson, S.; Nicolet, M.-A. · MRS Proceedings · 1981

Phase Transitions in Pure PlutoniumMitchell, Jeremy N.; Freibert, Franz, J.; Schwartz, Daniel S. · MRS Proceedings · 2012

Spintronics in NitridesDietl, Tomasz · MRS Proceedings · 2004

Dielectric Relaxation Of Semicrystalline PolyimidesHuo, Pengtao; Friler, Jerome; Cebe, Peggy · MRS Proceedings · 1991

Carbon Aerogels and XerogelsPekala, Richard W.; Alviso, Cynthia T. · MRS Proceedings · 1992

Why Covalent Ceramics are HardGilman, John J. · MRS Proceedings · 1993

Microwave Processing of Ceramics - An OverviewSutton, Willard H. · MRS Proceedings · 1992