Recent critical issues in Si/Si1−xGex/Si heterostructure FET devices
- 作者M.Y.A. Yousif; O. Nur; M. Willander
- 卷第45卷
- 期第11期
- 印刷ISSN0038-1101
- 文件大小216.04KB
- 发表时间2001
- DOI10.1016/s0038-1101(01)00236-2
- 页码1931-1937
Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputteringMonjoy Sreemany; Suchitra Sen · 2006
The Effect of Forming Gas Annealing on Pt/(Ba,Sr)TiO3/Pt Thin Film Capacitors for Future Dram Applications: Electrical Properties and Degradation MechanismsBaniecki, J. D.; Parks, C.; Laibowitz, R.B.; Shaw, T. M.; Lian, J. · MRS Proceedings · 2000
Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt–Si substratesYu, Shihui; Zhang, Chunmei; Yang, Pan; Wu, Muying; Sun, Yongtao; Li, Lingxia · Journal of Materials Science: Materials in Electronics · 2019
Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stackS.V. Jagadeesh Chandra; Jin-Sung Kim; Kyung-Won Moon; Chel-Jong Choi · 2012
Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate DielectricChandra, S. V. Jagadeesh; Jeong, Myung-Il; Park, Yun-Chang; Yoon, Jong-Won; Choi, Chel-Jong · MATERIALS TRANSACTIONS · 2011
SPIE Proceedings [SPIE 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012) - Xiamen, China (Thursday 26 April 2012)] 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy - Thermal annealing effect on the electrical properties of the Pt/Al <sub/>0.45</sub> Ga <sub/>0.55</sub> N Schottky contactsCheng, Caijing; Si, Junjie; Jiang, Yadong; Yu, Junsheng; Wang, Zhifeng · 2012