![[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs]()
[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAsFischetti, M.V.; Sano, N.; Laux, S.E.; Natori, K. · 1996