The effect of subsurface doping on gate oxide charging damageLinder, B.P.; En, W.G.; Cheung, N.W. · 1998

Comparison of experimental target currents with analytical model results for plasma immersion ion implantationEn, W.G.; Lieberman, M.A.; Cheung, N.W. · 1995

Modeling and experiments of waveform effects on oxide charging in plasma immersion ion implantation [MOS ICs]En, W.G.; Cheung, N.W. · 1997

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - Effect of antenna structures on charging damage in PIIIEn, W.G.; Cheung, N.W. · 1997

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - The effect of wells on gate oxide charging during plasma processingLinder, B.P.; En, W.G.; Cheung, N.W. · 1997

[IEEE 1st International Symposium on Plasma Process-Induced Damage - Santa Clara, CA (13-14 May 1996)] Proceedings of 1st International Symposium on Plasma Process-Induced Damage - Analytical Circuit Model Approach to Charging Damage in Plasma/implantation ProcessingEn, W.G.; Shich, B.P.; Cheung, N.W. · 1996

[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Multiple species implants with pulsed and DC plasma immersion ion implantationLinder, B.P.; En, W.G.; Cheung, N.W. · 1998