![[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Charge-injection length in silicon nanocrystal memory cells]()
[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Charge-injection length in silicon nanocrystal memory cellsOsabe, T.; Ishii, T.; Mine, T.; Sano, T.; Arigane, T.; Fukumura, T.; Kurata, H.; Saeki, S.; Ikeda, Y.; Yano, K. · 2004