Round table discussion
- 卷第168卷
- 印刷ISSN0167-2584
- 文件大小29.73KB
- 发表时间1986
- DOI10.1016/0167-2584(86)90512-8
High-resolution Rutherford backscattering spectrometry of metal-silicon interfacesJ.F. van der Veen; E.J. van Loenen · 1986
NiSi mixing: A new model for low temperature silicide formationE.J. Van Loenen; J.F. Van Der Veen; F.K. LeGoues · 1985
Ni-Si mixing: A new model for low temperature silicide formationE.J. Van Loenen; J.F. Van Der Veen; F.K. LeGoues · 1985
TiSi mixing at room temperature: A high resolution ion backscattering studyE.J. Van Loenen; A.E.M.J. Fischer; J.F. Van Der Veen · 1985
Ti-Si mixing at room temperature: A high resolution ion backscattering studyE.J. Van Loenen; A.E.M.J. Fischer; J.F. Van Der Veen · 1985
Evidence for island growth on deposition of silver onto Si(111) 7 × 7 at room temperatureE.J. van Loenen; M. Iwami; R.M. Tromp; J.F. van der Veen; F.W. Saris · 1983
High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section temE.J. Van Loenen; A.E.M.J. Fischer; J.F. Van Der Veen; F. Legoues · 1985