Grain growth mechanism in boron doped polycrystalline silicon
- 作者S. Kalainathan; R. Dhanasekaran; P. Ramasamy
- 卷第19卷
- 期第10期
- 印刷ISSN0361-5235
- 电子ISSN1543-186X
- 文件大小354.59KB
- 发表时间1990-10
- DOI10.1007/bf02651994
- 页码1135-1139
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