![First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide]()
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxideRotter, T.; Mistele, D.; Stemmer, J.; Seyboth, M.; Schwegler, V.; Paprotta, S.; Fedler, F.; Klausing, H.; Semchinova, O.K.; Aderhold, J.; Graul, J. · Electronics Letters · 2001